Electrically driven silicon resonant light emitting device based on slot-waveguide.
نویسندگان
چکیده
An all-silicon in-plane micron-size electrically driven resonant cavity light emitting device (RCLED) based on slotted waveguide is proposed and modeled. The device consists of a microring resonator formed by Si/SiO2 slot-waveguide with a low-index electroluminescent material (erbium-doped SiO2) in the slot region. The geometry of the slot-waveguide permits the definition of a metal-oxide-semiconductor (MOS) configuration for the electrical excitation of the active material. Simulations predict a quality factor Q of 6,700 for a 20- microm-radius electrically driven microring RCLED capable to operate at a very low bias current of 0.75 nA. Lasing conditions are also discussed.
منابع مشابه
Horizontal single and multiple slot waveguides: optical transmission at λ = 1550 nm
We experimentally demonstrate the optical transmission at 1550 nm of the fundamental slot modes (quasi-TM modes) in horizontal single and multiple slot waveguides and ring resonators consisting of deposited amorphous silicon and silicon dioxide. We demonstrate that the horizontal multiple slot configuration provides enhanced optical confinement in low index slot regions compared to a horizontal...
متن کاملSlot waveguides with polycrystalline silicon for electrical injection.
We demonstrate horizontal slot waveguides using high-index layers of polycrystalline and single crystalline silicon separated by a 10 nm layer of silicon dioxide. We measure waveguide propagation loss of 7 dB/cm and a ring resonator intrinsic quality factor of 83,000. The electric field of the optical mode is strongly enhanced in the low-index oxide layer, which can be used to induce a strong m...
متن کاملLow loss coupler to interface silicon waveguide and hybrid plasmonic waveguide
A metallic coupler is proposed to interface a silicon on insulator (SOI) waveguide with a narrow hybrid plasmonic waveguide (200× 200 nm). The device operation is investigated and optimized to attain the best tradeoff between the mode confinement and the propagation loss. Calculations reveal that a high confinement and low loss of the energy is achieved from a silicon slab waveguide into the di...
متن کاملContinuous-Wave Electrically Pumped 1.55- m Edge-Emitting Platelet Ridge Laser Diodes on Silicon
We report the successful integration on silicon of small footprint, low-threshold electrically pumped edge-emitting lasers by a new approach incorporating microcleaving technology to produce 6m-thick platelet lasers with cleaved facets, microscale pick. and place assembly to position them on the substrate, and diaphragm pressure solder bonding to attach/connect them permanently in place. InP-ba...
متن کاملSilicon-Waveguide Based Silicide Schottky- Barrier Infrared Detector for on-Chip Applications
We prove detailed analysis of a waveguide-based Schottky barrier photodetector (SBPD) where a thin silicide film is put on the top of a silicon-on-insulator (SOI) channel waveguide to absorb light propagating along the waveguide. Taking both the confinement factor of light absorption and the wall scanning induced gain of the photoexcited carriers into account, an optimized silicide thickness is...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Optics express
دوره 13 25 شماره
صفحات -
تاریخ انتشار 2005